The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Feb. 17, 2022
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Yang-Kyu Choi, Daejeon, KR;

Myung-Su Kim, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/54 (2006.01); G11C 16/04 (2006.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
G11C 11/54 (2013.01); G11C 16/0416 (2013.01); H10D 30/0411 (2025.01); H10D 30/687 (2025.01);
Abstract

Disclosed are a neuromorphic synapse device having an excellent linearity characteristic, and an operating method thereof. According to an embodiment, a neuromorphic synapse device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a charge transfer layer region formed on the floating gate region, and a control gate region, which is formed on the charge transfer layer region and which generates a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied, and performs a weight update operation by releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region by using the potential difference.


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