The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Feb. 13, 2024
Xiamen University, Xiamen, CN;
Junyong Kang, Xiamen, CN;
Wei Lin, Xiamen, CN;
Wenyu Kang, Xiamen, CN;
Haonan Chen, Xiamen, CN;
Xinlu Chen, Xiamen, CN;
Xiamen University, Xiamen, CN;
Abstract
A method for SiC high-speed growth by regulating growth monomers using chemical potential under a non-equilibrium condition. The method uses a C-rich process (Si/H=0.97‰, C/Si=1.55) to achieve a rapid growth of an epitaxial layer. When a relative chemical potential μof the C source in a growth atmosphere is high, growth monomers adsorbed in advance are SiC molecules in an epitaxial growth, and a height of a growth step is maintained at ½ c or 1 c. A rapid growth of the epitaxial growth is achieved, and a better surface roughness and a lower ionized doping concentration are obtained at the same time.