Methods and systems for real-time optimization and control of substrate in motion chemical vapor deposition

Abstract

There is a challenge with limited quantitative yield and uniformity of film being deposited by a chemical vapor deposition (CVD) process. The present disclosure provide methods and systems for real-time optimization and control of substrate in motion CVD. In the present disclosure, solution for improving KPIs of chemical vapor deposition process of transition metal dichalcogenides (TMDs) in a horizontal CVD reactor is provided. A provision of substrates in motion CVD reactor is provided that makes substrate to reciprocate, rotate, revolve, or oscillate in horizontal and vertical direction to improve deposition rates. The present disclosure increases deposition rate by providing more surface area to precursors flowing into the CVD reactor. An effect of process parameters is investigated using computational fluid dynamics (CFD), machine learning and optimization process. This leads to optimization of the CVD reactor and optimized recommendation settings for the CVD reactor are obtained.