The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Oct. 31, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sahil Patel, Sunnyvale, CA (US);

Wei Lei, Campbell, CA (US);

Xingyao Gao, Sunnyvale, CA (US);

Shirish A. Pethe, Cupertino, CA (US);

Yu Lei, Belmont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10P 14/40 (2026.01); H10P 72/00 (2026.01); H10P 72/30 (2026.01);
U.S. Cl.
CPC ...
H10W 20/032 (2026.01); H10P 14/412 (2026.01); H10P 72/0402 (2026.01); H10P 72/3202 (2026.01);
Abstract

Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes: depositing a metal buffer layer on a substrate and within a feature disposed in a dielectric layer of the substrate. The buffer layer is deposited using a first physical vapor deposition (PVD) process at a chamber pressure of less than 500 mTorr while applying less than or equal to 0.08 watts/cmof RF bias power to the substrate if the chamber pressure is less than or equal to 3 mTorr and applying less than or equal to 0.8 watts/cmof RF bias power to the substrate if the chamber pressure is greater than 3 mTorr. A metal liner layer is deposited atop the buffer layer using a second PVD process at a chamber pressure of less than or equal to 3 mTorr while applying greater than 0.08 watts/cmof RF bias power to the substrate.


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