The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jun. 08, 2022
Applicants:

Tokyo Electron Limited, Tokyo, JP;

University of Yamanashi, Kofu, JP;

Inventors:

Takashi Fuse, Nirasaki, JP;

Yusuke Kubota, Fuchu, JP;

Shuji Azumo, Nirasaki, JP;

Tetsuya Sato, Kofu, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/26 (2006.01); C23C 16/40 (2006.01); C23C 16/46 (2006.01); H10P 14/60 (2026.01); H10P 14/69 (2026.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6902 (2026.01); C23C 16/26 (2013.01); C23C 16/402 (2013.01); C23C 16/463 (2013.01); H10P 14/6502 (2026.01); H10P 14/69215 (2026.01);
Abstract

A film forming method selectively performs film formation. The film forming method includes a cooling operation and a film forming operation. The cooling operation includes cooling a substrate to a temperature at which molecules of a c-CFgas and a SFgas condense on a surface of the substrate, the substrate having a metal film and a first insulating film exposed on the surface and being supported inside a chamber. The film forming operation includes forming a carbon-containing film on the metal film by supplying a processing gas including the c-CFgas and the SFgas into the chamber while exciting the surface of the substrate.


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