The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Sep. 21, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hunter Frost, Albany, NY (US);
Kandabara Tapily, Albany, NY (US);
Tek PO Rinus Lee, Albany, NY (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H10P 14/20 (2026.01); H10P 14/43 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6514 (2026.01); C23C 16/402 (2013.01); C23C 16/403 (2013.01); C23C 16/45527 (2013.01); C23C 16/56 (2013.01); H10P 14/27 (2026.01); H10P 14/432 (2026.01); H01J 37/32091 (2013.01); H01J 37/321 (2013.01); H01J 37/32192 (2013.01); H01J 2237/332 (2013.01);
Abstract
A method for semiconductor processing includes forming a first film over a first region of a substrate. A second region of the substrate remains substantially free of the first film. The second region is adjacent to the first region. The method further includes performing a plasma treatment over the substrate and selectively depositing a second film over the first film. The first film blocks radicals from the first region during the plasma treatment. The second region of the substrate remains substantially free of the second film.