The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Sep. 20, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Luxherta Buzi, Chappaqua, NY (US);

Robert L. Bruce, White Plains, NY (US);

John M. Papalia, New York, NY (US);

Lynne Marie Gignac, Beacon, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/841 (2023.02); H10N 70/8828 (2023.02);
Abstract

Techniques for sidewall passivation and removal of redeposited materials and processing damage from phase change memory materials are provided. In one aspect, a phase change memory device includes: one or more phase change memory cells, where each of the phase change memory cells includes a phase change material between a bottom electrode and a top electrode; and a carbon and oxygen-containing passivation layer on sidewalls of the phase change material. An ovonic threshold switch can also be present between the bottom and top electrodes, in series with the phase change material, and the carbon and oxygen-containing passivation layer can also be present on sidewalls of the ovonic threshold switch. A method of fabricating the present phase change memory devices is also provided.


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