The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Dec. 14, 2023
Applicant:
Sony Group Corporation, Tokyo, JP;
Inventors:
Assignee:
Sony Group Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H10D 12/00 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/80 (2025.01); H10D 62/82 (2025.01); H10D 62/83 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2026.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 84/853 (2025.01); H10B 10/00 (2023.02); H10D 12/211 (2025.01); H10D 30/01 (2025.01); H10D 30/024 (2025.01); H10D 30/47 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 30/6713 (2025.01); H10D 30/6727 (2025.01); H10D 30/6741 (2025.01); H10D 30/675 (2025.01); H10D 30/6757 (2025.01); H10D 30/751 (2025.01); H10D 62/115 (2025.01); H10D 62/80 (2025.01); H10D 62/82 (2025.01); H10D 62/83 (2025.01); H10D 62/8303 (2025.01); H10D 62/882 (2025.01); H10D 64/511 (2025.01); H10D 84/0167 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10D 86/01 (2025.01); H10D 86/201 (2025.01); H10P 30/204 (2026.01); H10P 30/208 (2026.01);
Abstract
A complementary transistor is constituted of a first transistor TRand a second transistor TR, active regionsof the respective transistors are formed by layering first A layersand the first B layersrespectively, surface regionsprovided in a base correspond to first A layersrespectively, first B layerseach have a conductivity type different from that of the first A layers, and extension layersof the first B layer are provided on insulation regionsrespectively.
Oishi, Hidetoshi. (2026). Complementary transistor and semiconductor device (U.S. Patent No. 12733254). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733254
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile