The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Nov. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Kuo-Cheng Ching, Hsinchu County, TW;
Ting-Hung Hsu, Miaoli, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/17 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10D 62/10 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6212 (2025.01); H10D 30/6735 (2025.01); H10D 62/235 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 86/01 (2025.01); H10D 86/011 (2025.01); H10D 86/201 (2025.01); H10D 62/121 (2025.01); H10D 64/685 (2025.01);
Abstract
An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source feature to the drain feature.