The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Mar. 30, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Albert M. Chu, Nashua, NH (US);

Dureseti Chidambarrao, Weston, CT (US);

Brent A. Anderson, Jericho, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10W 20/00 (2026.01); H10W 20/20 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/01326 (2026.01); H10D 84/0167 (2025.01); H10D 84/0172 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10W 20/0698 (2026.01); H10W 20/20 (2026.01); H10W 20/427 (2026.01);
Abstract

A gate contact is formed within a gate cut region of a semiconductor structure to facilitate electrical routing. The gate contact includes a bottom portion extending within the gate cut region and adjoining a vertical end portion of a metal gate. A metal layer on the front side of the semiconductor structure includes signal tracks, one or more of which is vertically above the gate cut region. A signal track in the metal layer may be electrically connected to the gate contact. Selected source/drain regions within the semiconductor structure may be electrically connected to a back side power delivery network.


Find Patent Forward Citations

Xie, Ruilong. (2026). Gate contacts for semiconductor devices (U.S. Patent No. 12733252). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733252

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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