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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12733240 B1

PDFFull Text
Date of Patent:
Sep. 08, 2026

Filed:

Aug. 29, 2023

Structure with self-aligned offset gate contact and direct backside contact

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Brent A. Anderson, Jericho, VT (US);

Albert M. Chu, Nashua, NH (US);

Ravikumar Ramachandran, Pleasantville, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

L. Jeffrey Kelly, Esq.

Primary Examiner:

Yara B Green

Assistant Examiner:

Christopher M Roland

Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01); H10W 20/40 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/0198 (2025.01); H10D 30/501 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0149 (2025.01); H10W 20/482 (2026.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor structure is provided that includes a self-aligned offset frontside gate contact structure and a direct backside source/drain contact structure. The presence of the off-centered frontside gate contact structure is attractive since it mitigates the risk of gate contact-to-source/drain contact shorts and it also improves the metal line, M1, spacing within the overlying frontside back-end-of-the-line (BEOL) structure.

Find Patent Forward Citations

Xie, Ruilong. (2026). Structure with self-aligned offset gate contact and direct backside contact (U.S. Patent No. 12733240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733240

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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