The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Mar. 07, 2023
Applicant:
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Inventor:
Huan Wang, Hangzhou, CN;
Assignee:
Silergy Semiconductor Technology (Hangzhou) LTD., Hangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/65 (2025.01); H10D 62/10 (2025.01); H10P 30/20 (2026.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10D 30/0281 (2025.01); H10D 30/65 (2025.01); H10D 62/116 (2025.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01); H10W 10/0147 (2026.01); H10W 10/17 (2026.01);
Abstract
A method of making a semiconductor device can include: etching a substrate to form a trench in the substrate; forming a liner oxide layer on side surfaces and a process bottom portion of the trench through an oxide layer formation method; and where an oxidation time of a junction between an upper surface of the semiconductor substrate and side walls of the trench is increased by the oxide layer formation process, in order to smoothen the junction.
Wang, Huan. (2026). Semiconductor device and method for manufacturing the same (U.S. Patent No. 12733192). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12733192
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile