The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jun. 09, 2023
Nexperia B.v., Nijmegen, NL;
NEXPERIA B.V., Nijmegen, NL;
Abstract
A vertical semiconductor component including: a substrate; an epitaxial layer doped with a first conductivity type, preferably n-doped, provided on the substrate; a metal layer deposited on the epitaxial layer to form a Schottky contact with the epitaxial layer; a plurality of first regions embedded in the epitaxial layer and contacting the metal layer, and doped with a second conductivity type, in order to form a plurality of pn-junctions with the epitaxial layer; and a plurality of second regions embedded in a first region and contacting the metal layer, and doped with a second conductivity type, at a higher concentration, in order to form a plurality of low-resistance ohmic contacts with the metal layer. The semiconductor component includes a lateral cross section along which there are more first regions than second regions.