The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jul. 25, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhiyong Cai, Wuhan, CN;

Ziyu Zhang, Wuhan, CN;

Kang Yang, Wuhan, CN;

Hsing-An Lo, Wuhan, CN;

Yi Zhou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); H10B 12/05 (2023.02); H10B 12/312 (2023.02); H10B 12/482 (2023.02);
Abstract

Three-dimensional (3D) semiconductor devices and fabricating methods are provided. In some implementations, a disclosed semiconductor device comprises: an array of vertical transistors each comprising a semiconductor body extending in a vertical direction; a plurality of word lines each extending along a first lateral direction and comprising a plurality of gate structures of a row of the array of vertical transistors arranged in the first lateral direction; and a plurality of bit lines each extending along a second lateral direction different from the first lateral direction and comprising silicide.


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