The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Feb. 07, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sinyeon Kim, Suwon-si, KR;
Jooseong Yun, Suwon-si, KR;
Jieun Lee, Suwon-si, KR;
Hana Cho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes an active region, an isolation region on a side surface of the active region, a gate trench having a first trench portion crossing the active region and a second trench portion in the isolation region, a first gate portion within the first trench portion and a second gate portion within the second trench portion. The first gate portion and the second gate portion each includes a gate dielectric layer, a gate electrode on the gate dielectric layer, partially filling the gate trench, and having an upper surface disposed on a level lower than an upper end of the active region, and an insulative capping pattern on the gate electrode. The first gate portion includes a lower region, an intermediate region on the lower region, and an upper region on the intermediate region. A maximum width of the intermediate region is greater than a maximum width of the lower region and greater than a maximum width of the upper region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile