The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jul. 29, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Hui Chen, Hsinchu City, TW;
Chia-Jung Chang, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a conductive layer extending along a first lateral direction; a gate dielectric layer disposed over the conductive layer; a channel layer disposed over the gate dielectric layer and extending along a second lateral direction perpendicular to the first lateral direction; a first via-like structure, in direct contact with the channel layer, that is disposed along a first edge of the channel layer extending along the second lateral direction; and a second via-like structure, in direct contact with the channel layer, that is disposed along a second, opposite edge of the channel layer extending along the second lateral direction. The first via-like structure and second via-like structure are laterally separated apart along a third lateral direction that is clockwise tilted from the second lateral direction with a first positive angle.