The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 31, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takuma Sato, Hillsboro, OR (US);
Shota Yoshimura, Miyagi, JP;
Motoki Noro, Miyagi, JP;
Hsinkai Wang, Miyagi, JP;
Kota Oikawa, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32458 (2013.01); H01J 37/32715 (2013.01); H01J 37/32899 (2013.01); H01J 2237/327 (2013.01); H01J 2237/334 (2013.01); H01J 2237/336 (2013.01);
Abstract
A substrate processing method includes: (a) providing a substrate including a first region containing a first material including silicon and a second region containing a second material different from the first material; (b) etching the second region while forming a metal-containing layer on the first region, by a plasma generated from a processing gas including halogen and metal; (c) removing the metal-containing layer with a base.