The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Aug. 09, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hongmei Wang, Boise, ID (US);

Huiqi Gong, Redmond, WA (US);

Peng Zhao, Boise, ID (US);

Jingshan Wang, Eagan, MN (US);

Giovanni Ferrari, Boise, ID (US);

Assignee:

Micron Technology, Inc, Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 7/06 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01G 7/06 (2013.01); G11C 13/0038 (2013.01);
Abstract

Methods, systems, and devices for programmable chalcogenide capacitors are described. A first programming pulse may be applied, for a first duration, to a capacitor comprising a chalcogenide material to adjust a capacitance of the capacitor from a first capacitance to a second capacitance. A pulse may be applied to the capacitor based on applying the first programming pulse to the capacitor. A first voltage may be stored in the capacitor based on adjusting the capacitance of the capacitor from the first capacitance to the second capacitance, and the first voltage may be stored based on the capacitor having the second capacitance.


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