The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Jan. 05, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yu-Chung Lien, San Jose, CA (US);

Zhenming Zhou, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 5/06 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 5/063 (2013.01); G11C 16/30 (2013.01);
Abstract

A semiconductor device can include a substrate of semiconductor material and multiple stacks of memory cells disposed within the substrate. Each of the stacks can include a conductive string that connects memory cells to a bitline where each memory cell is located at an intersection of the conductive string and a wordline. The device can also include capacitor having a cylindrical body disposed between two adjacent stacks of memory cells where the capacitor includes an inner conductive layer and an outer conductive layer at least partially surrounding the inner conductive layer, where the inner conductive layer and the outer conductive layer are separated by a dielectric layer. The device can further include a power supply line conductively connected to an end of the capacitor at a base of the cylindrical body.


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