The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jun. 24, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Sey-Ping Sun, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 40/00 (2026.01); H10W 40/22 (2026.01); H10W 40/25 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 72/00 (2026.01); H10W 90/00 (2026.01); H10W 80/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 40/228 (2026.01); H10W 40/037 (2026.01); H10W 40/255 (2026.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 72/0198 (2026.01); H10W 90/00 (2026.01); H10W 90/701 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/20 (2026.01); H10W 90/288 (2026.01); H10W 90/401 (2026.01); H10W 90/792 (2026.01); H10W 90/794 (2026.01);
Abstract
A method includes bonding a first semiconductor die to a semiconductor substrate; bonding a second semiconductor die to the semiconductor substrate, wherein the second semiconductor die is laterally separated from the first semiconductor die by a gap; filling the gap between the first semiconductor die and the second semiconductor die with a metal material to form a thermally conductive region; and depositing a first dielectric layer over the first semiconductor die, the second semiconductor die, and the thermally conductive region.