The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Jun. 14, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Albert M. Chu, Nashua, NH (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Brent A. Anderson, Jericho, VT (US);

Reinaldo Vega, Mahopac, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); B82Y 10/00 (2011.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 84/83 (2025.01); H10W 20/20 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/427 (2026.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/256 (2025.01); H10D 84/83 (2025.01);
Abstract

According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The second nanodevice is located adjacent to and parallel to the first nanodevice along an x-axis. A first backside signal line and a second backside signal line are located at a cell boundary of the first nanodevice. A first gap exists between the first backside signal line and the second backside signal line.


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