The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jan. 02, 2024
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventor:
Sung Hoon Lee, Cheongju-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/17 (2026.01); H10D 30/65 (2025.01); H10W 10/00 (2026.01);
U.S. Cl.
CPC ...
H10W 10/17 (2026.01); H10D 30/65 (2025.01); H10W 10/0145 (2026.01);
Abstract
A high voltage semiconductor device includes an isolation region, in which multiple voids are formed in the isolation region along the vertical direction of the isolation region, so that the possibility of cracks occurring in the isolation region is minimized, and thus tungsten (W), etc. is prevented from penetrating into a space created by the cracks in a subsequent process and deteriorating the breakdown voltage characteristics.