The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Jun. 20, 2024
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Akira Mizutani, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 90/00 (2026.01);
U.S. Cl.
CPC ...
H10P 90/128 (2026.01); H10P 90/123 (2026.01); H10P 90/124 (2026.01);
Abstract

A processing method of a wafer includes a modified layer forming step of irradiating the wafer, from its back surface, with a laser beam of a wavelength having transmissivity for the wafer with its focal point positioned inside a boundary portion between an effective area and a chamfered portion, whereby a modified layer is formed along the chamfered portion, a chamfered portion removing step of applying an external force to an outer periphery of the wafer, and grinding the back surface of the wafer to a desired wafer thickness. The modified layer forming step includes a first step of forming a first modified layer relatively deep with cracks formed extending to the front surface, and a second step of forming a second modified layer relatively shallow, adjacent and on an outer or inner side of the first modified layer, with cracks formed not extending to the front surface.


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