The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Feb. 23, 2024
Tokyo Electron Limited, Tokyo, JP;
Derek Bassett, Austin, TX (US);
Kate Abel, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present disclosure provides wet processing systems and methods for improving etch uniformity across a semiconductor substrate when etching a silicon surface with a hydrofluoric acid (HF) and nitric acid (HNO) etch solution (otherwise referred to herein as an HF+HNOetch solution). More specifically, the present disclosure provides single wafer wet processing systems and methods that improve etch uniformity across a silicon surface of a semiconductor substrate by increasing the concentration of nitrous acid (HNO) in the HF+HNOetch solution used to etch the silicon surface prior to dispensing the HF+HNOetch solution onto the silicon surface.