The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Dec. 18, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Rami Khazaka, Leuven, BE;
Patricio Romero, Wilsele, BE;
Michael Eugene Givens, Oud-Heverlee, BE;
Charles Dezelah, Helsinki, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01); C30B 25/16 (2006.01); C30B 25/20 (2006.01); C30B 29/52 (2006.01); C30B 31/08 (2006.01); C30B 33/12 (2006.01);
U.S. Cl.
CPC ...
H10P 14/3411 (2026.01); C30B 25/16 (2013.01); C30B 25/20 (2013.01); C30B 29/52 (2013.01); C30B 31/08 (2013.01); C30B 33/12 (2013.01); H10P 14/27 (2026.01); H10P 14/3442 (2026.01); H10P 14/3444 (2026.01); H10P 14/3466 (2026.01);
Abstract
A method of forming a Si-comprising epitaxial layer selectively on a substrate and a semiconductor processing apparatus is disclosed. Embodiments of the presently described method of forming the Si-comprising epitaxial layer comprise performing a deposition process for forming the Si-comprising epitaxial layer selectively on a first exposed single crystalline surface relative to a second exposed single crystalline surface being different than the first exposed single crystalline surface.