The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Nov. 24, 2020
Applicant:
Enkris Semiconductor, Inc., Suzhou, CN;
Inventors:
Weihua Liu, Suzhou, CN;
Kai Cheng, Suzhou, CN;
Assignee:
ENKRIS SEMICONDUCTOR, INC., Suzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/815 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/815 (2025.01); H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01);
Abstract
A multi-wavelength LED structure () and a manufacturing method therefor. The multi-wavelength LED structure () comprises: a first semiconductor layer (), a stress release layer () having a V-shaped pit (), a first quantum well layer () and a second quantum well layer (), which are stacked, from bottom to top, on a side wall of the V-shaped pit () and a top wall of the stress release layer (), and a second semiconductor layer () that is located on the second quantum well layer (), wherein the conduction type of the second semiconductor layer () is the opposite of that of the first semiconductor layer ().