Light-emitting diode epitaxial wafer, growth method therefor, and light-emitting diode chip

Abstract

This application is directed to a light-emitting diode epitaxial wafer, a growth method therefor, and a light-emitting diode chip. The growth method comprises: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber; forming GaN crystal nuclei containing In atoms on the sapphire substrate; growing at least one composite layer on the GaN crystal nuclei, the GaN crystal nuclei growing to form a buffer layer, each composite layer comprising an InGaN sublayer and a GaN sublayer; and successively growing an N-type GaN layer, an active layer and a P-type GaN layer on the buffer layer to form an epitaxial wafer, the active layer comprising alternately stacked InGaN quantum wells and GaN quantum barriers. Large and stable GaN crystal nuclei are formed to effectively counteract stress generated by lattice mismatch between the sapphire substrate and a GaN-based material.