The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jun. 23, 2023
Globalfoundries U.s. Inc., Malta, NY (US);
Sagar Premnath Karalkar, Essex Junction, VT (US);
Vishal Ganesan, Dresden, DE;
Kyong Jin Hwang, Singapore, SG;
Souvick Mitra, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises adjacent first and second gates over a semiconductor substrate, a source adjacent to the first gate, and a drain adjacent to the second gate. The source includes a first well in the semiconductor substrate, a second well in the semiconductor substrate, and a doped region. The first well and the doped region have a first conductivity type, and the second well has a second conductivity type opposite from the first conductivity type. The doped region has a first portion that overlaps with the first well, and the doped region has a second portion that overlaps with the second well.