The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Mar. 02, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Philipp Steinmann, Durham, NC (US);

Edward Robert Van Brunt, Raleigh, NC (US);

Sei-Hyung Ryu, Cary, NC (US);

Jae-Hyung Park, Apex, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 62/106 (2025.01); H10D 62/111 (2025.01);
Abstract

A semiconductor die includes a drift region, an active region in the drift region, and an edge termination region surrounding the active region in the drift region. The drift region has a first doping type. The edge termination region includes a charge compensation region, a number of guard rings, and a counter doping region. The charge compensation region is in the drift region and has a second doping type that is opposite the first doping type. The guard rings are in the charge compensation region, have the second doping type, and a doping concentration that is greater than a doping concentration of the charge compensation region. The counter doping region is in the drift region and overlaps at least a portion of the charge compensation region. The counter doping region has the first doping type.


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