The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Mar. 31, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Chih-Wei Chang, Tainan City, TW;
Yao-Hsien Chung, Kaohsiung City, TW;
Shih-Wei Su, Tainan City, TW;
Hao-Hsuan Chang, Kaohsiung City, TW;
Ting-An Chien, Tainan City, TW;
Bin-Siang Tsai, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for forming a high electron mobility transistor is disclosed. A substrate is provided. A channel layer is formed on the substrate. An electron supply layer is formed on the channel layer. A dielectric passivation layer is formed on the electron supply layer. A gate recess is formed into the dielectric passivation layer and the electron supply layer. A surface modification layer is conformally deposited on an interior surface of the gate recess. The surface modification layer is first subjected to the nitride treatment and is then subjected to the oxidation treatment. A P-type GaN layer is formed in the gate recess and on the surface modification layer.