The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Dec. 28, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Liang Chen, Wuhan, CN;
Wei Liu, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A method for forming a 3D memory device includes forming an array wafer based on a first substrate having at least one cell region for forming a plurality of memory cells and at least one string structure region for forming a string structure; forming a first complementary metal-oxide-semiconductor (CMOS) wafer based on a second substrate having at least one string driver region corresponding to the at least one string structure region, and at least one page buffer high-voltage (HV) circuit region corresponding to the at least one cell region; forming a second CMOS wafer based on a third substrate having at least one page buffer region corresponding to the at least one cell region; and forming the 3D memory device based on the array wafer, the first CMOS wafer, and the second CMOS wafer stacked together.