The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jul. 20, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Oscar Van Der Straten, Guilderland Center, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/20 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/20 (2023.02); H10N 50/80 (2023.02);
Abstract
A magnetoresistive random access memory (MRAM) includes a pillar structure having a bottom electrode, a magnetic tunnel junction (MTJ) and a top electrode disposed on the MTJ. The MTJ has a reference layer, a free layer and a tunnel barrier disposed between the reference layer and the free layer. The MTJ is disposed on the bottom electrode. The bottom electrode and the top electrode are recessed within a periphery of the MTJ to form a disrupted sidewall profile.