The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Sep. 13, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
PO-Lin Chen, Tainan City, TW;
Tsung-Hsun Wu, Kaohsiung City, TW;
Liang-Wei Chiu, Tainan City, TW;
Yao-Chin Cheng, Hsinchu City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A layout pattern of static random-access memory (SRAM) includes a substrate, a plurality of diffusion regions and a plurality of gate structures are located on the substrate, each diffusion region includes a first diffusion region, a second diffusion region, a third diffusion region, a fourth diffusion region, a fifth diffusion region, a sixth diffusion region, a seventh diffusion region and an eighth diffusion region, and each gate structure spans the plurality of diffusion regions. The plurality of gate structures include a first gate structure, the first gate structure includes a first L-shaped portion, which spans the first diffusion region and the fifth diffusion region and forms a first pull-down transistor (PD), the first diffusion region is adjacent to and in direct contact with the fifth diffusion region.
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