The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
May. 06, 2023
Aac Technologies Pte. Ltd., Tampines, SG;
AAC Technologies Pte. Ltd., Tampines, SG;
Abstract
The method for fabricating a FBAR provided according to the present invention includes providing a substrate, forming a dielectric material layer on a surface of the substrate away from the substrate, forming a bottom electrode on a surface of the dielectric material layer away from the substrate, forming a piezoelectric material layer on a surface of the bottom electrode away from the substrate, forming an intermediate metal layer on a surface of the piezoelectric material layer away from the substrate, forming a mass load layer on a surface of the intermediate metal layer away from the substrate, and forming a top electrode on a surface of the mass load layer away from the substrate. In this way, process choices are increased, and flexibility in multiple mass load formation of the FBAR below top electrode and in a filter having the FBARs are increased, thereby improving sensitivity in the filter.