The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Apr. 26, 2024
Micron Technology, Inc., Boise, ID (US);
Pitamber Shukla, Boise, ID (US);
Robert Winston Mason, Boise, ID (US);
Huai-Yuan Tseng, San Ramon, CA (US);
Akira Goda, Tokyo, JP;
Kishore Kumar Muchherla, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for techniques for managing a voltage recovery operation are described. In some cases, as part of performing a write command to store data to a set of memory cells, the memory system may store an indication of the initial time at which the write operation occurred, the temperature of the set of memory cells at the initial time, or both. The memory system may subsequently manage an accumulated value based on a duration from the initial time and the temperature of the set of memory cells during the duration. If the accumulated value exceeds an accumulation threshold, the memory system may identify an indication of degradation of the set of memory cells. If the indication exceeds a degradation threshold, the memory system may perform a voltage recovery operation to modify voltages of the set of memory cells.