Memory systems and methods of controlling the same, and readable storage media

Abstract

An example memory system includes a memory device and a memory controller. The memory device includes memory cells each configured to be in one of data states. The memory controller is configured to: perform a read operation using a test read voltage corresponding to a selected data state among the data states; acquire a count of memory cells each having a threshold voltage that satisfies a preset condition including: the threshold voltage being less than or equal to the test read voltage, or the threshold voltage being greater than or equal to the test read voltage; determine a difference between the count and an expected count; and acquire at least one read retry voltage according to the difference, a mapping relationship, and a read retry table, wherein the mapping relationship includes a correspondence between an expected voltage offset value and the difference.