The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Feb. 07, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Si-Woo Lee, Saratoga, CA (US);

Haitao Liu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 5/06 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 5/063 (2013.01); H10B 41/27 (2023.02);
Abstract

Some embodiments include apparatuses in which one of the apparatuses includes a first conductive structure, a second conductive structure, a third conductive structure, and a memory cell. The memory cell includes a semiconductor portion located on a first level of the apparatus and coupled to the first conductive structure, and a charge storage structure located on the first level coupled to the semiconductor portion and separated from the second conductive structure. The third conductive structure is located on a second level of the apparatus adjacent the semiconductor portion, and including first, second, and third conductive regions. The third conductive region is located between the first and second conductive regions and has a material different from a material of the first conductive region and a material of the second conductive region.


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