The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Aug. 20, 2024
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Kuan-Chih Chen, New Taipei City, TW;

Ming-Hsiu Lee, Hsinchu City, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1078 (2013.01); G11C 5/145 (2013.01);
Abstract

A memory device comprising a memory array, a voltage generator and an array control circuit is provided. The memory array is coupled to the voltage generator and comprises first and second arrays. The array control circuit is coupled to the memory array and the voltage generator, and configured to: in a programming stage, control the voltage generator to generate a first control voltage, and generate a temporary address to control the first array to store storage data and address data in a first programming step according to the temporary address and the first control voltage; in an idle stage, control the voltage generator to generate a second control voltage, and control the second array to store storage data in a second programming step according to address data and the second control voltage. The voltage of the first programming step is greater than the voltage of the second programming step.


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