The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

May. 31, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Jiameng Cui, Wuhan, CN;

Kaikai You, Wuhan, CN;

Jianquan Jia, Wuhan, CN;

Junbao Wang, Wuhan, CN;

Wenhao Xiong, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G06F 13/16 (2013.01); G06F 2213/16 (2013.01);
Abstract

A memory, an operation method thereof, and a memory system are provided. The memory includes: a memory cell array including memory strings each including memory cells and top select transistors; top select gate lines coupled to top select transistors; word lines coupled to memory cells; and a peripheral circuit coupled to top select gate lines and word lines and configured to: apply a first pulse to a first word line of word lines, such that a voltage of the first word line reaches a first target voltage at a first time instant; apply a second pulse to a first top select gate line of top select gate lines adjacent to the first word line, such that a voltage of the first top select gate line reaches a second target voltage at a second time instant that is later than the first time instant.


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