The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Apr. 18, 2023
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Chun-Heng Liao, Xindian City, TW;
Jiun Yi Wu, Zhongli City, TW;
Kuo-Chung Yee, Taoyuan City, TW;
Li-Weng Chang, Sanxia Township, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
An embodiment photonic device may include a first terminal including silicon and a waveguide structure optically connected with the first terminal, a cladding dielectric layer formed around the first terminal including the waveguide structure, a second terminal including polysilicon, and a capacitor dielectric layer disposed between the first terminal and the second terminal. The capacitor dielectric layer may include a SiON layer. The waveguide structure may include a first index of refraction in response to an application of a first voltage difference between the first terminal and the second terminal and a second index of refraction in response to an application of a second voltage difference between the first terminal and the second terminal. The silicon of the first terminal may include a p-typed doping and the polysilicon of the second terminal may include an n-type doping.