The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Aug. 14, 2023
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Yoshizo Osumi, Kyoto, JP;

Taro Nishioka, Kyoto, JP;

Tomohira Kikuchi, Kyoto, JP;

Kenji Fujii, Kyoto, JP;

Hiroaki Matsubara, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 70/40 (2026.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10W 90/811 (2026.01); H10W 70/421 (2026.01); H10W 74/111 (2026.01); H10W 90/753 (2026.01); H10W 90/755 (2026.01);
Abstract

A semiconductor device includes first and second semiconductor elements, a conductive support, a third semiconductor element and a sealing resin. The conductive support includes first and second leads spaced apart in a first direction. The first semiconductor element is supported by the first lead. The second semiconductor element is supported by the second lead. The third semiconductor element, supported by the conductive support, insulates the first semiconductor element and the second semiconductor element. The sealing resin covers a part of the conductive support. A distance dbetween the first lead and the second lead in the first direction is greater than distance dgiven by Equation below. In Equation below, Y is the number of years of insulation life (years) expected for the semiconductor device, A and B are constants determined by a material of the sealing resin, and X is a voltage (kVrms).


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