The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jan. 23, 2024
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Yao-Hsien Chung, Tainan City, TW;

Fu-Yu Tsai, Tainan City, TW;

Bin-Siang Tsai, Changhua County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 72/90 (2026.01); H10W 70/63 (2026.01); H10W 72/00 (2026.01);
U.S. Cl.
CPC ...
H10W 72/90 (2026.01); H10W 72/019 (2026.01); H10W 70/635 (2026.01); H10W 72/923 (2026.01); H10W 72/926 (2026.01); H10W 72/952 (2026.01); H10W 72/957 (2026.01);
Abstract

A semiconductor structure includes a semiconductor substrate; an interconnection structure disposed on the semiconductor substrate; a cap layer disposed on the interconnection structure; a top dielectric layer disposed on the cap layer; a bonding dielectric layer disposed on the top dielectric layer; a plurality of copper pads disposed in the bonding dielectric layer, the top dielectric layer and the cap layer; and a plurality of dangling-bond pads disposed in the bonding dielectric layer and the top dielectric layer.


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