The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jul. 18, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ching-Tzu Chen, Ossining, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Vijay Narayanan, New York, NY (US);
Takeshi Nogami, Schenectady, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/44 (2026.01); H10P 50/00 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/4403 (2026.01); H10P 50/00 (2026.01); H10W 20/076 (2026.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract
Provided is a method for fabricating an interconnect. The method comprises forming a topological semi-metal layer. The method further comprises patterning the topological semi-metal layer to form one or more interconnects. The method further comprises forming a dielectric layer between the one or more interconnects. The method further comprises forming a hermetic dielectric cap layer on top of the one or more interconnects and the dielectric layer.