The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jan. 17, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/304 (2006.01); H10P 52/00 (2026.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10P 52/00 (2026.01); H10W 20/01 (2026.01);
Abstract
A method for manufacturing a semiconductor structure is provided. The method includes forming a transistor over the first wafer; bonding a first wafer to a second wafer; trimming an edge region of the first wafer along a circular trimming path, wherein a center of the circular trimming path is offset from a center of the second wafer in a top view; after trimming the edge region of the first wafer, thinning down the first wafer; and after thinning down the first wafer, forming a backside conductive feature electrically connected to the transistor.