The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Feb. 21, 2024
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hayato Tanaka, Tokyo, JP;

Hayato Iga, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 36/00 (2026.01); B23K 26/53 (2014.01); H10P 52/00 (2026.01);
U.S. Cl.
CPC ...
H10P 36/03 (2026.01); B23K 26/53 (2015.10); H10P 52/00 (2026.01);
Abstract

A method of processing a bonded wafer includes a modified layer forming step of applying a laser beam to a first wafer from a reverse side thereof while positioning a focused spot of the laser beam within the first wafer to form a modified layer in the first wafer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and a grinding step of grinding the reverse side of the first wafer to thin down the first wafer. In the modified layer forming step, the focused spot of the laser beam includes multi-focused spots, and a line interconnecting the multi-focused spots forms a depression angle ranging from 15 to 50 degrees toward the outer circumferential portion of the first wafer with respect to a line parallel to a plane of the first wafer.


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