The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jul. 03, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chi On Chui, Hsinchu, TW;
Cheng-Hao Hou, Hsinchu, TW;
Da-Yuan Lee, Jhubei City, TW;
Pei Ying Lai, Hsinchu, TW;
Yi Hsuan Chen, Hsinchu, TW;
Jia-Yun Xu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/692 (2026.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10P 14/60 (2026.01); H10D 30/43 (2025.01);
U.S. Cl.
CPC ...
H10P 14/69391 (2026.01); H10D 30/014 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10P 14/6339 (2026.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01);
Abstract
A method includes forming a gate dielectric on a semiconductor region, depositing an aluminum nitride layer on the gate dielectric, depositing an aluminum oxide layer on the aluminum nitride layer, performing an annealing process to drive aluminum in the aluminum nitride layer into the gate dielectric, removing the aluminum oxide layer and the aluminum nitride layer, and forming a gate electrode on the gate dielectric.