The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Sep. 14, 2023
United Microelectronics Corp., Hsinchu, TW;
Shin-Hung Li, Nantou County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A manufacturing method of a semiconductor structure including the following steps is disclosed. A definition layer is formed on a substrate. The definition layer includes a first dielectric layer and a second dielectric layer. A first isotropic etching process is performed on the second dielectric layer to form a first opening in the second dielectric layer. A portion of the first opening is located under the patterned photoresist layer. A first anisotropic etching process is performed on the first dielectric layer to form a second opening in the first dielectric layer. The first opening is connected to the second opening to form a third opening. The patterned photoresist layer is removed. An etch back process is performed on the first dielectric layer and the second dielectric layer, so that a sidewall of the definition layer exposed by the third opening is an inclined surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile