Integrated active silicon photonic devices and methods thereof

Abstract

Integrated systems including photonic integrated circuit (PIC) devices and methods of fabrication using selective area heteroepitaxy (SAH). The methods include forming a plurality of waveguide structures overlying a substrate, forming a cavity region between the waveguide structures, and forming a plurality of device materials within the cavity region such that an active region material of these device materials is aligned to at least a portion of the waveguide structures. The plurality of device materials can include compound semiconductor (CS) materials deposited by SAH, can be coupled to the waveguide structures or configured with an interface region in between, and can form an optical device, a laser device, or the like. Further, the resulting device can be integrated with other devices formed by SAH in separate cavity regions. The devices in the integrated system can be configured in a coupling scheme, such as a butt-coupling, directional coupling, or the like.