The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Sep. 14, 2023
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventors:
Georgio El Zammar, Hamburg, DE;
Tim Böttcher, Hamburg, DE;
Massimo Cataldo Mazzillo, Nijmegen, NL;
Sönke Habenicht, Nijmegen, NL;
Assignee:
Nexperia B.V., Nijmegen, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 8/50 (2025.01); H10D 8/60 (2025.01); H10D 30/60 (2025.01); H10D 30/66 (2025.01); H10D 30/80 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/106 (2025.01); H10D 8/50 (2025.01); H10D 8/60 (2025.01); H10D 30/615 (2025.01); H10D 30/665 (2025.01); H10D 30/801 (2025.01); H10D 62/105 (2025.01); H10D 62/8325 (2025.01); H10D 62/112 (2025.01);
Abstract
Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarity. By including second rings having a second polarity opposite to the first polarity, a reduced effect of interface charges on the performance of the semiconductor power device can be observed.