The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jul. 20, 2023
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ramy Nashed Bassely Said, San Jose, CA (US);

Sarath Puthenthermadam, San Jose, CA (US);

Jiahui Yuan, San Francisco, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Longju Liu, Milpitas, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and containing a memory film and a vertical semiconductor channel; and a neighboring electrically conductive layer interference reduction feature provided for a first subset of the electrically conductive layers, such that a second subset of the electrically conductive layers lacks the neighboring electrically conductive layer interference reduction feature.


Find Patent Forward Citations

Loading…